BUK9275-100A,118

BUK9275-100A,118 datasheet

Маркировка

BUK9275-100A,118
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BUK9275-100A,118 Configuration: Single Continuous Drain Current: 21.7 A Current - Continuous Drain (id) @ 25?° C: 21.7A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 10 V ID_COMPONENTS: 1950398 Input Capacitance (ciss) @ Vds: 1690pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DPak, TO-252 (2 leads+tab), SC-63 Power - Max: 88W Power Dissipation: 88000 mW Rds On (max) @ Id, Vgs: 72 mOhm @ 10A, 10V Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 10 V Resistance Drain-Source RDS (on): 0.072 Ohms Fall Time: 57 ns Rise Time: 120 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 58 ns Part # Aliases: /T3 BUK9275-100A Other Names: 934056253118, BUK9275-100A /T3
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